Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density
The transition rate for a single hop of a charge carrier in a semiconducting polymer is assumed to be thermally activated. As the temperature approaches absolute zero, the predicted conductivity becomes infinitesimal in contrast to the measured finite conductivity. Here we present a uniform description of charge transport in semiconducting polymers, including the existence of absolute-zero ground-state oscillations that allow nuclear tunnelling through classical barriers. The resulting expression for the macroscopic current shows a power-law dependence on both temperature and voltage. To suppr... Mehr ...
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Dokumenttyp: | Artikel |
Erscheinungsdatum: | 2013 |
Schlagwörter: | Netherlands / Information and Communication Technologies / SP1-Cooperation / Netherlands Organisation for Scientific Research (NWO) / EC / FP7 / European Geothermal Research and Innovation Search Engine / European Commission / Nanosciences / Nanotechnologies / Materials and new Production Technologies - NMP / General Physics and Astronomy / General Biochemistry / Genetics and Molecular Biology / General Chemistry / Multidisciplinary |
Sprache: | Englisch |
Permalink: | https://search.fid-benelux.de/Record/base-28769299 |
Datenquelle: | BASE; Originalkatalog |
Powered By: | BASE |
Link(s) : | https://www.openaccessrepository.it/record/92063 |
The transition rate for a single hop of a charge carrier in a semiconducting polymer is assumed to be thermally activated. As the temperature approaches absolute zero, the predicted conductivity becomes infinitesimal in contrast to the measured finite conductivity. Here we present a uniform description of charge transport in semiconducting polymers, including the existence of absolute-zero ground-state oscillations that allow nuclear tunnelling through classical barriers. The resulting expression for the macroscopic current shows a power-law dependence on both temperature and voltage. To suppress the omnipresent disorder, the predictions are experimentally verified in semiconducting polymers at high carrier density using chemically doped in-plane diodes and ferroelectric field-effect transistors. The renormalized current-voltage characteristics of various polymers and devices at all temperatures collapse on a single universal curve, thereby demonstrating the relevance of nuclear tunnelling for organic electronic devices.