Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density

The transition rate for a single hop of a charge carrier in a semiconducting polymer is assumed to be thermally activated. As the temperature approaches absolute zero, the predicted conductivity becomes infinitesimal in contrast to the measured finite conductivity. Here we present a uniform description of charge transport in semiconducting polymers, including the existence of absolute-zero ground-state oscillations that allow nuclear tunnelling through classical barriers. The resulting expression for the macroscopic current shows a power-law dependence on both temperature and voltage. To suppr... Mehr ...

Verfasser: Auke Jisk Kronemeijer
Dago M. de Leeuw
L. Jan Anton Koster
Paul W. M. Blom
Tobias Cramer
Kamal Asadi
Dokumenttyp: Artikel
Erscheinungsdatum: 2013
Schlagwörter: Netherlands / Information and Communication Technologies / SP1-Cooperation / Netherlands Organisation for Scientific Research (NWO) / EC / FP7 / European Geothermal Research and Innovation Search Engine / European Commission / Nanosciences / Nanotechnologies / Materials and new Production Technologies - NMP / General Physics and Astronomy / General Biochemistry / Genetics and Molecular Biology / General Chemistry / Multidisciplinary
Sprache: Englisch
Permalink: https://search.fid-benelux.de/Record/base-27591542
Datenquelle: BASE; Originalkatalog
Powered By: BASE
Link(s) : https://www.openaccessrepository.it/record/92063

The transition rate for a single hop of a charge carrier in a semiconducting polymer is assumed to be thermally activated. As the temperature approaches absolute zero, the predicted conductivity becomes infinitesimal in contrast to the measured finite conductivity. Here we present a uniform description of charge transport in semiconducting polymers, including the existence of absolute-zero ground-state oscillations that allow nuclear tunnelling through classical barriers. The resulting expression for the macroscopic current shows a power-law dependence on both temperature and voltage. To suppress the omnipresent disorder, the predictions are experimentally verified in semiconducting polymers at high carrier density using chemically doped in-plane diodes and ferroelectric field-effect transistors. The renormalized current-voltage characteristics of various polymers and devices at all temperatures collapse on a single universal curve, thereby demonstrating the relevance of nuclear tunnelling for organic electronic devices.